A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor With Backside- Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

This article presents a prototype 22.4 μ\textm pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with 45- thick Si substrate were introduced for low noise and high radiation hardness to energy photons. Two-stage lateral overflow integration capacitor (LOFIC) voltage domain memory bank high-density trench capacitors WDR GS. The developed sxCMOS achieved maximum 21.9 Me - full well capacity single exposure 129 dB by GS operation. Over 70% quantum efficiency (QE) toward was successfully achieved. is step forward 4 M detector system be utilized in next-generation synchrotron facilities free-electron lasers.